型号:

IXTT69N30P

RoHS:无铅 / 符合
制造商:IXYS描述:MOSFET N-CH 300V 69A TO-268
详细参数
数值
产品分类 分离式半导体产品 >> FET - 单
IXTT69N30P PDF
标准包装 30
系列 PolarHT™
FET 型 MOSFET N 通道,金属氧化物
FET 特点 标准
漏极至源极电压(Vdss) 300V
电流 - 连续漏极(Id) @ 25° C 69A
开态Rds(最大)@ Id, Vgs @ 25° C 49 毫欧 @ 500mA,10V
Id 时的 Vgs(th)(最大) 5V @ 250µA
闸电荷(Qg) @ Vgs 180nC @ 10V
输入电容 (Ciss) @ Vds 4960pF @ 25V
功率 - 最大 500W
安装类型 表面贴装
封装/外壳 TO-268-3,D³Pak(2 引线+接片),TO-268AA
供应商设备封装 TO-268
包装 管件
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